Citation

You, A. H. and Cheang, P. L. (2007) Current impulse response of thin InP p[sup +]-i-n[sup +] diodes using full band structure Monte Carlo method. Journal of Applied Physics, 101 (4). 044502. ISSN 00218979

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Abstract

A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p(+)-i-n(+) diodes with the multiplication region of 0.2 mu m is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p(+)-i-n(+) diodes with multiplication lengths of 0.05 and 0.2 mu m using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.(c) 2007 American Institute of Physics.

Item Type:	Article
Subjects:	T Technology > T Technology (General) Q Science > QC Physics
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	18 Oct 2011 07:01
Last Modified:	18 Oct 2011 07:01
URII:	http://shdl.mmu.edu.my/id/eprint/3107

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