Citation
Kumar,, A and Gupta, , RS and Haldar,, S and Bindra, , S and Singh,, A and Bose,, S and Kalra,, E (2001) Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET. INDIAN JOURNAL OF PURE & APPLIED PHYSICS , 39 (11). pp. 731-737. ISSN 0019-5596 Full text not available from this repository.Abstract
An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An expression for channel length modulation factor is also developed and the substrate current is calculated.
Item Type: | Article |
---|---|
Subjects: | Q Science > QC Physics |
Depositing User: | Ms Rosnani Abd Wahab |
Date Deposited: | 09 Sep 2011 03:22 |
Last Modified: | 09 Sep 2011 03:22 |
URII: | http://shdl.mmu.edu.my/id/eprint/2679 |
Downloads
Downloads per month over past year
Edit (login required) |