Citation

Choo, K Y and Ong, D S (2004) The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs. Semiconductor Science and Technology, 19 (8). pp. 1067-1073. ISSN 0268-1242

Full text not available from this repository.

Abstract

An analytical-band Monte Carlo model incorporating four non-parabolic spherical valleys to represent the first two conduction bands has been developed to model hot electron transport and impact ionization in GaAs. We have tested the performance of this simple model against full-band Monte Carlo simulations for calculating the probability distribution function of impact ionization path length, time and energy; and transient velocity overshoot at high fields. This simpler model is: found capable of reproducing the full-band model results satisfactorily but at much lower computational cost.

Item Type:	Article
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	19 Aug 2011 01:36
Last Modified:	19 Aug 2011 01:36
URII:	http://shdl.mmu.edu.my/id/eprint/2457

Downloads

Edit (login required)