Citation

Ehteshami, Sahand and Ong, Duu Sheng (2025) Modelling Low-Noise Electron Multiplication in Hg0.7Cd0.3Te Avalanche Photodiodes. In: 2025 Multimedia University Engineering Conference, MECON 2025, 21 July 2025 - 23 July 2025, Cyberjaya, Malaysia.

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Abstract

Accurate modelling of electron impact ionisation in semiconductors is crucial for preventing breakdown in device design and optimizing the performance of Avalanche Photodiodes (APDs). In this study, we apply the Random Path Length (RPL) model with a four-parameter Weibull-Fréchet (WF) distribution function to model the electron-initiated multiplication gain and noise in Hg0.7Cd0.3Te APDs. A systematic analysis of the WF parameters demonstrates how the WF function effectively shapes the probability density function of electron ionisation path length, highlighting the model’s capability to simulate the avalanche process in APDs. This WF-RPL model successfully predicts an exceptionally low excess noise factor of approximately 1.2 for a multiplication gain exceeding 100, as measured in a 2.5 μm Hg0.7Cd0.3Te APD. The PDF of electron ionisation path length, derived from the WF-RPL model, reveals a pronounced dead space effect even in long APDs, leading to more deterministic spatial ionisation probabilities compared to traditional model.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	impact ionisation, Avalanche Photodiode, Weibull-Fréchet, Random Path length, gain, noise, dead space
Subjects:	T Technology > TR Photography > TR925-1050 Photomechanical processes
Divisions:	Faculty of Artificial Intelligence & Engineering (FAIE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	19 Mar 2026 02:57
Last Modified:	19 Mar 2026 02:57
URII:	http://shdl.mmu.edu.my/id/eprint/15610

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