Citation

Mohamad Arifin, Nurliyana and Mhd Noor, Ervina Efzan and Mohamad, Fariza and Mohamad, Norhidayah and Mohamed Muzni, Nur Haslinda (2024) Enhancing the Properties of Nanostructure TiO2 Thin Film via Calcination Temperature for Solar Cell Application. Energies, 17 (14). p. 3415. ISSN 1996-1073

Text Enhancing the Properties of Nanostructure TiO2 Thin Film via Calcination Temperature for Solar Cell Application.pdf - Published Version Restricted to Repository staff only Download (3MB)

Abstract

: In this study, titanium dioxide (TiO2 ) was deposited onto a fluorine-doped tin oxide (FTO) substrate using the sol–gel spin coating method. Through the implementation of calcination treatment on the thin film, enhancements were observed in terms of structural, optical, and morphological properties. Various calcination temperatures were explored, with TiO2 annealed at 600 ◦C identified as the optimal sample. Analysis of the X-ray diffraction spectroscopy (XRD) pattern revealed the prominent orientation plane of (101), indicating the presence of anatase TiO2 with a tetragonal pattern at this temperature. Despite fluctuations in the optical spectrum, the highest transmittance of 80% was observed in the visible region within the wavelength range of 400 nm. The estimated band-gap value of 3.45 eV reaffirmed the characteristic of TiO2 . Surface analysis indicated the homogeneous growth of TiO2 , uniformly covering the FTO substrate. Cross-sectional examination revealed a thickness of 263 nm with dense and compact nature of TiO2 thin film. No presence of defects or pores reflects a well-organized structure and high-quality formation. Significant electrical rectification properties were observed, indicating the successful formation of a p–n junction. In summary, calcination treatment was found to be crucial for enhancing the properties of the thin film, highlighting its significance in the development of solar cell applications.

Item Type:	Article
Uncontrolled Keywords:	thin film, titanium dioxide
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	02 Sep 2024 07:58
Last Modified:	02 Sep 2024 07:58
URII:	http://shdl.mmu.edu.my/id/eprint/12921

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