Citation

Mohd Akhbar, Siti Amiera and Choo, Kan Yeep and Ong, Duu Sheng (2023) Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications. Journal of Engineering Technology and Applied Physics, 5 (1). pp. 1-4. ISSN 26828383

Text (Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications) 346 - Published Version Restricted to Repository staff only Download (2kB)

Abstract

In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch structure. The d-doped effect caused an increment in the fundamental operating frequency and current harmonic amplitude in InP Gunn diodes by modifying the electric field profile within the device. An InP notch-d-doped Gunn diode with device length of 800 nm under 3V DC bias is capable of producing AC current signal of 287 GHz, reaching the THz region, with its harmonic amplitude being 5.68×108 A/m2. It is observed that InP-based notch-d-doped Gunn diode is able to generate signals at a higher operating frequency with a larger output power as compared to that of GaAs due to the higher electron drift velocity and threshold field in InP material.

Item Type:	Article
Uncontrolled Keywords:	Gunn diode, d-doped, Indium Phosphide, Monte Carlo mode, Terahertz source
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Mr. MUHAMMAD AZRUL MOSRI
Date Deposited:	19 Aug 2024 07:33
Last Modified:	19 Aug 2024 07:33
URII:	http://shdl.mmu.edu.my/id/eprint/12821

Downloads

Edit (login required)