Simulation of avalanche time in thin GaN/4H–SiC heterojunction avalanche photodiodes


Cheang, Pei Ling and You, Ah Heng and Yap, Yee Ling and Sun, Cha Chee (2024) Simulation of avalanche time in thin GaN/4H–SiC heterojunction avalanche photodiodes. Journal of Computational Electronics. ISSN 1569-8025

[img] Text
s10825-024-02146-9.pdf - Published Version
Restricted to Repository staff only

Download (5MB)


A random ionization-time model is introduced to compute the avalanche time of double carrier multiplication in heterojunction avalanche photodiodes (APDs). The Monte Carlo method is employed to determine the distribution of carriers for both electron- and hole- initiated multiplications in the GaN/4H–SiC heterojunction APDs of multiplication widths, w=0.1 and 0.2 μm, incorporating of dead space and hetero-interface efects at high electric feld region with respect to time. The carriers that are injected into the GaN layer will undergo multiplication based on material-dependent electron and hole impact ionization coefcients αGaN and βGaN, then cross the heterojunction based on the probability and followed by the multiplication based on material dependent α4H–SiC and β4H–SiC in the 4H–SiC layer. The avalanche time is calculated from the instant the parent carrier enters the multiplication region until all carriers leave the multiplication region. Our model is able to show the distribution of carriers with respect to space and time, inclusive of the presence of secondary carriers due to diferent groups of feedback carriers and dead time. Due to potential diference at hetero-interface, the avalanche time of the GaN/4H–SiC heterojunction APDs is less than that of the GaN and 4H–SiC homojunction APDs of the same multiplication width; hence, they are good candidates for sensing and switching devices

Item Type: Article
Uncontrolled Keywords: Photodiodes
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK8300-8360 Photoelectronic devices (General)
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 03 Apr 2024 01:42
Last Modified: 03 Apr 2024 01:42


Downloads per month over past year

View ItemEdit (login required)