Citation

Jin, Xiao and Xie, Shiyu and Liang, Baolai L. and Yi, Xin and Lewis, Harry and Lim, Leh Woon and Liu, Yifan and Ng, Beng Koon and Huffaker, Diana L. and Tan, Chee Hing and Ong, Duu Sheng and David, John P. R. (2022) Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP. In: Optical Components and Materials XIX 2022, 20-24 Feb 2022, Online Conference.

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Abstract

A series of AlAsSb p+-i-n+ and n+-i-p+ diodes with varying i-region thickness from 0.08μm to 1.55μm have been used to determine the temperature dependent impact ionization coefficients by performing avalanche multiplication measurements from 210K to 335K. The increase in electron and hole ionization coefficients as the temperature decreases is much smaller when compared to InAlAs and InP. This leads to a much smaller avalanche breakdown variation of 13mV/K in a 1.55μm p+- i-n+ diode. For a 10Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD), the variation in breakdown voltage is predicted to be only 15.58 mV/K.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Ionization
Subjects:	Q Science > QD Chemistry > QD450-801 Physical and theoretical chemistry
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	05 Jul 2022 02:08
Last Modified:	05 Jul 2022 02:08
URII:	http://shdl.mmu.edu.my/id/eprint/10102

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