Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP


Jin, Xiao and Xie, Shiyu and Liang, Baolai and Yi, Xin and Lewis, Harry and Lim, Leh W. and Liu, Yifan and Ng, Beng Koon and Huffaker, Diana L. and Tan, Chee Hing and Ong, Duu Sheng and David, John P. R. (2022) Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP. IEEE Journal of Selected Topics in Quantum Electronics, 28 (2). pp. 1-8. ISSN 1077-260X

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The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p + -i-n + and two n + -i-p + diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 μm thick p + -i-n + structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.

Item Type: Article
Uncontrolled Keywords: Monte Carlo method, avalanche breakdown, avalanche photodiode (APD), impact ionization, AlAsSb, InP, InAlAs temperature dependence, ionization coefficient
Subjects: T Technology > T Technology (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 04 Feb 2022 02:57
Last Modified: 04 Feb 2022 02:57
URII: http://shdl.mmu.edu.my/id/eprint/9954


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