Citation

Singh, Ajay Kumar and Tan, Chun Fui and Lim, Way Soong (2022) Drain current model for a hetero‐dielectric single gate tunnel field effect transistor ( HDSG TFET ). International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 35 (3). ISSN 08943370

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Abstract

Tunnel field effect transistor (TFET) is a potential candidate to replace CMOS in deep-submicron region due to its lower SS (subthreshold swing, <60 mV/decade) at room temperature. However, the conventional TFET suffers from low tunneling current and high ambipolar current. To overcome these two shortcomings, a new structure, known as Hetero-dielectric gate TFET (HDG TFET), has been proposed in the literature. To analyze the electrical characteristics of this structure, a closed form of analytical expression of current is required. This paper presents the analytical current model for Hetero-dielectric single gate (HDSG) TFET structure without using any iterative method. The developed analytical models show a good agreement with 2-D TCAD simulator results. The model is used to study the electrical behavior of the proposed device under various physical and bias variations.

Item Type:	Article
Uncontrolled Keywords:	Tunnel field effect transistor
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials
Divisions:	Faculty of Engineering and Technology (FET) Faculty of Information Science and Technology (FIST)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	17 Jan 2022 08:47
Last Modified:	05 Jul 2022 04:45
URII:	http://shdl.mmu.edu.my/id/eprint/9843

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