Citation
You , Ah Heng (2005) Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP. PhD thesis, Multimedia University. Full text not available from this repository.
Official URL: http://myto.perpun.net.my/metoalogin/logina.php
Abstract
A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+ diodes are presented. A realistic FUll Band Monte Carlo (FBMC) model using empirical local pseudopotential band structure is used to simulate multiplication gain, excess noise factor and time response of InP p+ -i-n+ diodes. A simple and fast Random Path Length (RPL) model incorporating the dead-space effect is developed to reproduce the avalanche characteristics of short InP p+ -i-n+ diodes.
| Item Type: | Thesis (PhD) |
|---|---|
| Subjects: | Q Science > QA Mathematics > QA299.6-433 Analysis |
| Divisions: | Faculty of Engineering (FOE) |
| Depositing User: | Ms Rosnani Abd Wahab |
| Date Deposited: | 06 Jul 2010 06:29 |
| Last Modified: | 06 Jul 2010 06:29 |
| URII: | http://shdl.mmu.edu.my/id/eprint/840 |
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