Citation

Ng, Zi Neng and Chan, Kah Yoong and Muslimin, Shahruddin and Knipp, Dietmar (2018) P-Type Characteristic of Nitrogen-Doped ZnO Films. Journal of Electronic Materials, 47 (9). pp. 5607-5613. ISSN 0361-5235

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Abstract

Zinc oxide (ZnO) is a promising material for emerging electronic and photonic applications due to its wide direct band gap and large exciton binding energy. Despite on-going developments, the control of the conductivity type in ZnO films continues to be a challenge. Stable p-type ZnO is required in order to fabricate standalone ZnO-based devices. Nitrogen is considered as a promising candidate to produce a shallow acceptor level in ZnO, since it has similar radii and electrical structure to oxygen. In this experiment, we utilize the low cost sol–gel spin coating technique to fabricate nitrogen-doped ZnO (ZnO:N) films. All films show great optical transmittance above 80% in the visible region. ZnO:N film at 15 at.% doping concentration shows strong UV emission and exhibits low resistivity. A p–n homojunction device based on ZnO:N shows characteristic of a typical rectifying diode, with a turn-on voltage of approximately 1.2 V.

Item Type:	Article
Uncontrolled Keywords:	Zinc oxide, nitrogen-doping, p-type, sol–gel
Subjects:	T Technology > TP Chemical technology > TP934-945 Paints, pigments, varnishes, etc.
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	15 Mar 2021 00:31
Last Modified:	15 Mar 2021 00:31
URII:	http://shdl.mmu.edu.my/id/eprint/7465

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