Citation
Koh, Song Foo and Yap, Seong Shan and Tou, Teck Yong (2018) Effects of electric field on polysilicon gettering of iron and copper in highly boron-doped silicon. Journal of Vacuum Science & Technology B, 36 (3). 03F114. ISSN 2166-2746 Full text not available from this repository.
Official URL: https://doi.org/10.1116/1.5014031
Abstract
The polysilicon gettering behavior of iron (Fe) and copper (Cu) in highly boron doped silicon was studied under isothermal annealing with and without the presence of an electric field. Depth profiles of Fe and Cu in the polysilicon were obtained by dynamic secondary ion mass spectrometry. Enhanced gettering as a result of the electric field can be attributed to the drift-behavior of Fe and Cu over thermal diffusion at elevated temperature. While the polysilicon-silicon interfacial segregation acted against the back-diffusion of Cu, the same was not observed for Fe. About 61% of Cu and 35% of Fe were trapped in polysilicon after 2 days owing to strong interfacial segregations.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Doped semiconductors |
| Subjects: | Q Science > QC Physics > QC501-766 Electricity and magnetism > QC501-(721) Electricity |
| Divisions: | Faculty of Engineering (FOE) |
| Depositing User: | Ms Rosnani Abd Wahab |
| Date Deposited: | 08 Nov 2020 14:07 |
| Last Modified: | 08 Nov 2020 14:07 |
| URII: | http://shdl.mmu.edu.my/id/eprint/7259 |
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