Citation

Singh, Ajay Kumar and Kumar, B. Naresh and Sheng, Gan Che (2017) A quantum correction based model for study of quantum confinement effects in nano-scale carbon nanotube field-effect transistor (CNTFET) under inversion condition. The European Physical Journal Applied Physics, 78 (1). p. 10101. ISSN 1286-0042

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Abstract

In this paper, quantum correction method has been used to study the quantum confinement effect in carbon nanotube field-effect transistor (CNTFET) instead of solving time consuming coupled Schrödinger-Poisson (SP) equation. The quantum confinement parameter, which depends on the oxide thickness and tube's diameter, is introduced to take care of quantum effect in the device. An analytical expression for quantum corrected potential is derived after solving Poisson equation under appropriate boundary conditions. A surface potential based compact and simple analytical expression has been proposed to calculate the quantum corrected concentration. The proposed surface potential model holds good for submicron devices in the inversion region. The threshold voltage shift due to quantum effect increases with scaling of oxide thickness, increase in channel concentration and tube's diameter. The simulated results of the proposed models show a good agreement with numerical results. A Quantum Correction Based Model for study of Quantum Confinement effects in Nano-scale carbon nanotube field-effect transistor (CNTFET) under inversion condition. Available from: https://www.researchgate.net/publication/315873401_A_Quantum_Correction_Based_Model_for_study_of_Quantum_Confinement_effects_in_Nano-scale_carbon_nanotube_field-effect_transistor_CNTFET_under_inversion_condition [accessed Jan 03 2018].

Item Type:	Article
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	29 Jul 2020 05:05
Last Modified:	29 Jul 2020 05:05
URII:	http://shdl.mmu.edu.my/id/eprint/6995

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