Analytical band Monte Carlo analysis of electron transport in silicene

Yeoh, K. H. and Ong, Duu Sheng and Ooi, C. H. Raymond and Yong, T. K. and Lim, S. K. (2016) Analytical band Monte Carlo analysis of electron transport in silicene. Semiconductor Science and Technology, 31 (6). 065012. ISSN 0268-1242

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Official URL: http://doi.org/10.1088/0268-1242/31/6/065012

Abstract

An analytical band Monte Carlo (AMC) with linear energy band dispersion has been developed to study the electron transport in suspended silicene and silicene on aluminium oxide (Al2O3) substrate. We have calibrated our model against the full band Monte Carlo (FMC) results by matching the velocity-field curve. Using this model, we discover that the collective effects of charge impurity scattering and surface optical phonon scattering can degrade the electron mobility down to about 400 cm2 V−1 s−1 and thereafter it is less sensitive to the changes of charge impurity in the substrate and surface optical phonon. We also found that further reduction of mobility to ~100 cm2 V−1 s−1 as experimentally demonstrated by Tao et al (2015 Nat. Nanotechnol. 10 227) can only be explained by the renormalization of Fermi velocity due to interaction with Al2O3 substrate.

Item Type: Article
Uncontrolled Keywords: Analytical band Monte Carlo method, charge scattering, Fermi velocity, silicene
Subjects: T Technology > T Technology (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 02 Feb 2017 09:36
Last Modified: 02 Feb 2017 09:36
URI: http://shdl.mmu.edu.my/id/eprint/6410

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