Dielectric properties of iron doped barium strontium titanate thin film based capacitor

Ayad, Abdo Thabit Saeed (2015) Dielectric properties of iron doped barium strontium titanate thin film based capacitor. Masters thesis, Multimedia University.

Full text not available from this repository.
Official URL: http://library.mmu.edu.my/diglib/onlinedb/dig_lib....

Abstract

In this research work, a new capacitor stack aluminium/iron doped barium strontium titanate/nickel iron/copper (Al/BSTF/NiFe/Cu) has been designed and fabricated with aluminium (Al) as top electrode, iron doped barium strontium titanate (Ba 1-x Sr x Ti 1-y Fe y O3) as dielectric material and nickel-iron thin film deposited on copper substrate (NiFe/Cu) as bottom electrode. The as fabricated capacitor is used for storage applications like dynamic random access memory cell. The as-prepared capacitor offered a capacitance of 473.6 nF, a dielectric constant of 321 and a leakage current density of 3 pA/cm2 for ± 5 V under optimized conditions. Pulse electrodeposition technique under galvanostatic mode with ultrasonic field for different pulse current magnitudes, pulse deposition times and ultrasonic bath temperatures was used to fabricate NiFe/Cu thin film as bottom electrode. The NiFe/Cu thin film optimum deposition conditions were found to be at a current magnitude of 80 mA, a deposition time of 3 min and at an ultrasonic bath temperature of 27C which had the atomic percentage of 79.2% Ni and 20.8% Fe, surface roughness of 4.71 nm, resistivity of 9.4 µ.O.cm and average grain size of 41.95 nm. Over the optimization study, it was observed that ultrasonic bath at room temperature with a short deposition time reduced the average grain size, surface roughness and hence the film resistivity.

Item Type: Thesis (Masters)
Additional Information: Call No.: TK7895.M4 A93 2015
Uncontrolled Keywords: Dynamic random access memory
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7885-7895 Computer engineering. Computer hardware > TK7895.M4 Memory systems
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 09 Jun 2016 08:56
Last Modified: 09 Jun 2016 08:56
URI: http://shdl.mmu.edu.my/id/eprint/6339

Actions (login required)

View Item View Item