THz radiation by quasi-ballistic electron reflection in AlSb/InAs/AlSb heterostructures

Ong, Duu Sheng and Hartnagel, Hans L. (2015) THz radiation by quasi-ballistic electron reflection in AlSb/InAs/AlSb heterostructures. EPL (Europhysics Letters), 109 (3). ISSN 1286-4854

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The new approach of generating THz signals, not by harmonic extraction, but by ballistic reflection is studied with optimized material concepts. We use an ensemble self-consistent Monte Carlo model to evaluate the generation of THz signals from ultrafast current pulses produced by quasi-ballistic electron transport and reflection in AlSb/InAs/AlSb heterostructures with a well of 200 nm length. The small electron effective mass in the $\Gamma $ -valley of InAs and the large energy separation between $\Gamma $ and satellite valleys allow electrons in InAs to propagate at a high speed $>10^{8}\ \text{cm/s}$ at 300 K for a distance longer than 450 nm at an applied field of 20 kV/cm. The superior electron speed and the large conduction band offset of InAs/AlSb heterointerface are found to be effective to generate strong current oscillations at sub-picosecond time scales under a sinusoidal excitation.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 07 Apr 2015 08:42
Last Modified: 13 May 2015 04:23

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