Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

Choon, Beng Looi and Huang, Yung-Jui and Hung, Yung-Jr and Chang, Hsuan-Chen and Lee, San-Liang and Huang, Ying-Sheng and Lee, Kuei-Yi (2014) Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application. Thin Solid Films, 556. pp. 146-154. ISSN 0040-6090

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Abstract

Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube-silicon nanowire (CNT-SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/mu m and highest emission current density of 191 mu A/cm(2) among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT-SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/mu m and higher emission current density of 5.86 mA/cm(2). The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells.

Item Type: Article
Subjects: T Technology > T Technology (General)
Divisions: Faculty of Information Science and Technology (FIST)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 09 May 2014 01:19
Last Modified: 09 May 2014 01:19
URI: http://shdl.mmu.edu.my/id/eprint/5485

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