The impact of tunnel oxide nitridation to reliability performance of charge storage non-volatile memory devices

Lee, Meng Chuan and Wong, Hin Yong (2014) The impact of tunnel oxide nitridation to reliability performance of charge storage non-volatile memory devices. Journal of Nanoscience and Nanotechnology, 14 (2). ISSN 1508-1520

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Official URL: http://www.ingentaconnect.com/content/asp/jnn/2014...

Abstract

This paper is written to review the development of critical research on the overall impact of tunnel oxide nitridation (TON) with the aim to mitigate reliability issues due to incessant technology scaling of charge storage NVM devices. For more than 30 years, charge storage non-volatile memory (NVM) has been critical in the evolution of intelligent electronic devices and continuous development of integrated technologies. Technology scaling is the primary strategy implemented throughout the semiconductor industry to increase NVM density and drive down average cost per bit. In this paper, critical reliability challenges and key innovative technical mitigation methods are reviewed. TON is one of the major candidates to replace conventional oxide layer for its superior quality and reliability performance. Major advantages and caveats of key TON process techniques are discussed. The impact of TON on quality and reliability performance of charge storage NVM devices is carefully reviewed with emphasis on major advantages and drawbacks of top and bottom nitridation. Physical mechanisms attributed to charge retention and Vt instability phenomenon are also reviewed in this paper.

Item Type: Article
Subjects: T Technology > T Technology (General)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 09 Apr 2014 04:38
Last Modified: 09 Apr 2014 04:38
URI: http://shdl.mmu.edu.my/id/eprint/5417

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