Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method

Lim, Thong Leng and Yoon, T. L. and Min, T. K. and Hung, S. H. and Jakse, N. and Lai, S. K. (2013) Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method. The Journal of Chemical Physics, 139 (20). ISSN 0021-9606

Full text not available from this repository.
Official URL: http://scitation.aip.org/content/aip/journal/jcp/1...

Abstract

We grew graphene epitaxially on 6H-SiC(0001) substrate by the simulated annealing method. The mechanisms that govern the growth process were investigated by testing two empirical potentials, namely, the widely used Tersoff potential [J. Tersoff, Phys. Rev. B39, 5566 (1989)] and its more refined version published years later by Erhart and Albe [Phys. Rev. B71, 035211 (2005)]. Upon contrasting the results obtained by these two potentials, we found that the potential proposed by Erhart and Albe is generally more physical and realistic, since the annealing temperature at which the graphene structure just coming into view at approximately 1200 K is unambiguously predicted and close to the experimentally observed pit formation at 1298 K within which the graphene nucleates. We evaluated the reasonableness of our layers of graphene by calculating carbon-carbon (i) average bond-length, (ii) binding energy, and (iii) pair correlation function. Also, we compared with related experiments the various distance of separation parameters between the overlaid layers of graphene and substrate surface.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 11 Mar 2014 04:38
Last Modified: 24 Jul 2014 06:54
URI: http://shdl.mmu.edu.my/id/eprint/5385

Actions (login required)

View Item View Item