An organic thin film transistor based non-volatile memory with zinc oxide nanoparticles

Lee, W. K. and Aw, K. C. and Wong, H. Y. and Chan, K. Y. and Leung, M. and Salim, N. Tjitra (2011) An organic thin film transistor based non-volatile memory with zinc oxide nanoparticles. Thin Solid Films, 519 (15). pp. 5208-5211. ISSN 0040-6090

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Official URL: http://dx.doi.org/10.1016/j.tsf.2011.01.161

Abstract

The aim of this paper is to establish a fabrication process for non-volatile memory (NVM) transistors using ZnO nanoparticles, polymethylsilsesquioxane (PMSSQ) and soluble pentacene. ZnO nanoparticles mixed into the PMSSQ solution are used to create a nanocomposite layer for charge trapping in the NVM. It has been demonstrated that the nanocomposite layer in a metal–insulator–semiconductor structure can cause a hysteresis of ~ 6 V in a capacitance–voltage (C–V) plot, indicating a significant charge trapping capability. A threshold voltage shift of ~ 2.3 V between a programmed and erased NVM transistor and a carrier mobility of ~ 0.002 cm2/V-s are achieved. At present the fabricated NVMs have a limited life cycle of 4 program/erase cycles.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 24 Jan 2014 07:40
Last Modified: 24 Jan 2014 07:40
URI: http://shdl.mmu.edu.my/id/eprint/4993

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