Ambipolar charge transport in microcrystalline silicon thin-film transistors

Knipp, Dietmar and Chan, Kah-Yoong and Gordijn, Aad and Marinkovic, M. and Stiebig, Helmut (2011) Ambipolar charge transport in microcrystalline silicon thin-film transistors. Journal of Applied Physics, 109 (2). 024504. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3531990

Abstract

Hydrogenated microcrystalline silicon(μc-Si:H) is a promising candidate for thin-film transistors(TFTs) in large-area electronics due to high electron and hole charge carriermobilities. We report on ambipolar TFTs based on μc-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the μc-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carriermobilities of 30–50 cm2/V s and 10–15 cm2/V s, respectively. In this work, the electrical characteristics of the ambipolar μc-Si:HTFTs are described by a simple analytical model that takes the ambipolar chargetransport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar μc-Si:HTFTs.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 24 Jan 2014 07:38
Last Modified: 24 Jan 2014 07:38
URI: http://shdl.mmu.edu.my/id/eprint/4992

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