Avalanche noise characteristics of thin GaAs structures with distributed carrier generation

Kim, F. Li and Duu, S. Ong and David, John P. R. and Tozer, Richard C. and Rees, Graham J. and Plimmer, Stephen A. and Keng, Y. Chang and Roberts, John S. (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE Transactions on Electron Devices, 47 (5). pp. 910-914. ISSN 0018-9383

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Abstract

It is known that both pure electron and pure hole injection into thin GaAs multiplication regions gives rise to avalanche multiplication with noise lower than predicted by the local noise model. In this paper, it is shown that the noise from multiplication initiated by carriers generated throughout a 0.1 μm avalanche region is also lower than predicted by the local model but higher than that obtained with pure injection of either carrier type. This behavior is due to the effects of nonlocal ionization brought about by the dead space; the minimum distance a carrier has to travel in the electric field to initiate an ionization event

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 29 Oct 2013 07:53
Last Modified: 29 Oct 2013 07:53
URI: http://shdl.mmu.edu.my/id/eprint/4330

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