Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

Koh, Songfoo and You, Ahheng and Tou, Teckyong (2013) Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry. Materials Science and Engineering: B, 178 (5). pp. 321-325. ISSN 09215107

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Official URL: http://dx.doi.org/10.1016/j.mseb.2012.12.004

Abstract

The effective copper diffusivity (D-eff) in boron-doped silicon wafer was measured using a Dynamic Secondary Ion Mass Spectrometry (D-SIMS) that was incorporated with an out-drift technique. By this technique, positive interstitial copper ions (Cut) migrated to the surface region when a continuous charge of electrons showered on the oxidized silicon wafer, which was also bombarded by primary O-2(+) ions. The Cu-1(+) ions at the surface region diffused back to the bulk when the electron showering stopped. The D-SIMS recorded the real-time distribution of Cu-1(+) ions, generating depth profiles for in-diffusion of copper for silicon-wafer samples with different boron concentrations. These were curve-fitted using the standard diffusion expressions to obtain different De ff values, and compared with other measurement techniques. C) 2012 Elsevier B.V. All rights reserved.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 13 May 2013 04:50
Last Modified: 18 Feb 2014 06:44
URI: http://shdl.mmu.edu.my/id/eprint/3848

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