Mean multiplication gain and excess noise factor in In0.53Ga0.47As avalanche photodiodes

Low,, Y.F and You, , A.H (2009) Mean multiplication gain and excess noise factor in In0.53Ga0.47As avalanche photodiodes. Solid State Science and Technology, 17 (2). pp. 144-157. ISSN 0128-7389

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Abstract

The best-fitted electron and hole impact ionisation coefficients are obtained and it is found that the electron impact ionisation coefficient is higher than the hole impact ionisation coefficient. In this work, the impact ionisation coefficients at low electric fields are extrapolated to a high electric field region of 800 kV/cm. Two proposed models are produced by using the best-fitted electron and hole impact ionization coefficients over the wide range of electric fields. The impact ionisation coefficients for Model A converge at the high electric field region while for Model B the impact ionisation coefficients diverge. It is found that Model A is more suitable and therefore, this model is used to determine the mean multiplication gain and excess noise factor in the short and long devices. A random ionisation path length model is used for the electron- and hole-initiated multiplication in the multiplication region of 0.1μm and 0.2μm for short devices, and also 1.3μm, 2.0μm, 3.6μm and 4.6μm for long devices. The simulation is based on the dead space effect as well as by excluding the dead space effect in our work. It is found that the dead space effect becomes significant in short devices. The inclusion of dead space effect caused the reduction of excess noise factor in In0.53Ga0.47As avalanche photodiode.

Item Type: Article
Subjects: Q Science > Q Science (General)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 04 Feb 2013 03:46
Last Modified: 04 Feb 2013 03:46
URI: http://shdl.mmu.edu.my/id/eprint/3810

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