Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer

Lee, W.K. and Wong, H.Y. and Aw, K.C. (2011) Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer. Microelectronic Engineering, 88 (9). pp. 2837-2839. ISSN 01679317

Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.mee.2011.04.027

Abstract

In this article the electrical characteristics of zinc oxide nanoparticles (ZnO NP) embedded in polymethylsilsesquioxane (PMSSQ) film have been studied. PMSSQ film with embedded ZnO NP was sandwiched between aluminium and ITO coated glass as a capacitor-based memory device. Charge transport mechanism in this device has been investigated. The device can be programmed and erased similar to a flash-memory. Programming the device causes the trapping of electrons transported from the aluminium into the ZnO NP via trapped-charge-limited current mechanism. The erasing of the memory device is via the Fowler-Nordheim tunneling of electrons in the opposition direction towards the aluminium electrode. (C) 2011 Elsevier B.V. All rights reserved.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 29 Feb 2012 02:46
Last Modified: 29 Feb 2012 02:46
URI: http://shdl.mmu.edu.my/id/eprint/3363

Actions (login required)

View Item View Item