An organic programmable diode with pentacene, zinc oxide nanoparticles and polymethylsilsesquioxane

Lee, W.K. and Wong, H.Y. and Aw, K.C. (2011) An organic programmable diode with pentacene, zinc oxide nanoparticles and polymethylsilsesquioxane. Solid State Communications, 151 (21). pp. 1541-1544. ISSN 00381098

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Official URL: http://dx.doi.org/10.1016/j.ssc.2011.07.032

Abstract

In this paper, we proposed an organic programmable diode as a memory device. This device consists of layers of pentacene and zinc oxide nanoparticles embedded in polymethylsilsesquioxane. The device exhibits a change in current flow of an order up to 10(5) and is comparable or better to many reported organic diode memory devices. A two-barrier model has been used to explain the memory effect of the organic diode. The device can be written and erased multiple times similar to a flash memory. (C) 2011 Elsevier Ltd. All rights reserved.

Item Type: Article
Subjects: T Technology > T Technology (General)
Q Science > QC Physics
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 05 Jan 2012 07:42
Last Modified: 05 Jan 2012 07:42
URI: http://shdl.mmu.edu.my/id/eprint/3322

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