Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes

Ong, D. S. and Li, K. F. and Plimmer, S. A. and Rees, G. J. and David, J. P. R. and Robson, P. N. (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes. Journal of Applied Physics, 87 (11). pp. 7885-7891. ISSN 00218979

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Official URL: http://dx.doi.org/10.1063/1.373472

Abstract

A full-band Monte Carlo model is used to investigate the probability distribution functions of impact ionization path length and impact ionization energy for electrons and holes in GaAs. The simulations show that the soft ionization threshold energy in GaAs allows impact ionization to occur at energies much higher than the band gap. As a result, secondary carriers have a shorter dead space than newly injected carriers. The ionization path length distributions narrow at higher fields, producing a more deterministic impact ionization process in thin devices. The model is also used to simulate avalanche multiplication and noise in submicron homojunction GaAs p(+)-i-n(+) diodes. The predicted mean multiplication, < M > and excess noise factor, F are in quantitative agreement with the experimental results, in which F decreases as the length of multiplication region is reduced. (C) 2000 American Institute of Physics. [S0021- 8979(00)08211-6].

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 09 Sep 2011 02:41
Last Modified: 09 Sep 2011 02:41
URI: http://shdl.mmu.edu.my/id/eprint/2712

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