Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET

Kumar,, A and Gupta, , RS and Haldar,, S and Bindra, , S and Singh,, A and Bose,, S and Kalra,, E (2001) Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET. INDIAN JOURNAL OF PURE & APPLIED PHYSICS , 39 (11). pp. 731-737. ISSN 0019-5596

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Abstract

An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An expression for channel length modulation factor is also developed and the substrate current is calculated.

Item Type: Article
Subjects: Q Science > QC Physics
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 09 Sep 2011 03:22
Last Modified: 09 Sep 2011 03:22
URI: http://shdl.mmu.edu.my/id/eprint/2679

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