Growth and characterisation of GaxIn1-xSb thin films for infrared detectors


Barman, , PB (2002) Growth and characterisation of GaxIn1-xSb thin films for infrared detectors. ASIAN JOURNAL OF CHEMISTRY, 14 (3-4). pp. 1365-1369. ISSN 0970-7077

Full text not available from this repository.


Growth of GaxIn1-xSb (x = 0.1 to 0.5) thin films was carried out using hot wall epitaxy system on high purity quartz glasses and high resistive silicon as substrates. The source material for the growth of film was grown in the laboratory using vertical Bridgmen method in microprocessor controlled high temperature furnace. The grown films were characterized using grazing angle X-ray diffraction analysis and found to be polycrystalline in nature. XPS studies on the films showed non-stoichiometry compared to the bulk crystals. Band gap measurements using FTIR confirms the formation of energy gap in IR region, but-the value does not exactly tally with the expected value of x. SEM studies on the films confirm the formation of pits on the surface which attributes to the non-stoichiometry in the films. Electrical characterization of the film, viz., Vander Pauw resistivity, Hall-mobility, surface carrier concentration, etc. measurement is under progress to study the interplay between the microstructure and electronic properties of polycrystalline semiconducting thin films. Finally Au/GaxIn1-xSb Schottky diodes were fabricated on the grown films and electrically characterised for IR detectors.

Item Type: Article
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 25 Aug 2011 03:37
Last Modified: 25 Aug 2011 03:37


Downloads per month over past year

View ItemEdit (login required)