Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors

GOH, Y and ONG, D (2004) Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors. Microelectronics and Reliability, 44 (7). pp. 1199-1202. ISSN 00262714

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Official URL: http://dx.doi.org/10.1016/j.microrel.2004.04.001

Abstract

The dead space effect under near-breakdown conditions in GaInP/GaAs composite collector double heterojunction bipolar transistor (DHBT) is investigated analytically. Using the dead space corrected model, the breakdown voltage is found to decrease with GaAs spacer thickness as reported from experiments. The common-mode emitter IV characteristics for the DHBT are simulated until the onset of multiplication with good agreement with reported experimental results [IEEE Elec. Dev. Lett. 15 (1994) 10]. A proposed optimised structure is simulated with comparably good turn-on I V characteristics and improved breakdown performance. (C) 2004 Elsevier Ltd. All rights reserved.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 19 Aug 2011 05:43
Last Modified: 19 Aug 2011 05:43
URI: http://shdl.mmu.edu.my/id/eprint/2464

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