Citation

You, Ah Heng and Ong, Duu Sheng (2004) Avalanche Multiplication and Noise Characteristics of Thin InP p+–i–n+Diodes. Japanese Journal of Applied Physics, 43 (11A). pp. 7399-7404. ISSN 0021-4922

Full text not available from this repository.

Abstract

A simple random path length model for computing the statistics of avalanche gain and excess noise factor in thin InP p(+)-i-n(+) diodes is presented. We incorporate the dead-space effect in our model, which is expected to play an important role in reducing noise in homejunction InP avalanche photodiodes (APDs). It is shown that the dead-space effect reduces avalanche noise when the device length is small. Our model is able to simulate the characteristics of multiplication gain and noise including the dead-space effect in InP p+-i-n+ diodes, particularly at device lengths omega of 0.1 mum and 0.2 mum. We demonstrated that the dead-space effect and feedback impact ionization are the dominant effects for improving excess noise factor in thin InP APDs.

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	22 Aug 2011 02:07
Last Modified:	22 Aug 2011 02:07
URII:	http://shdl.mmu.edu.my/id/eprint/2430

Downloads

Edit (login required)