Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)]

Song, T. L. and Chua, S. J. and Fitzgerald, E. A. (2006) Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)]. Journal of Applied Physics, 99 (3). 039901. ISSN 00218979

Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.2168511
Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 10 Aug 2011 07:30
Last Modified: 10 Aug 2011 07:30
URI: http://shdl.mmu.edu.my/id/eprint/2010

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