Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

LUO, P and ZHOU, Z and CHAN, K and TANG, D and CUI, R and DOU, X (2008) Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition. Applied Surface Science, 255 (5). 2910-2915 . ISSN 01694332

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Official URL: http://dx.doi.org/10.1016/j.apsusc.2008.08.038

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B(2)H(6)) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si: H thin films grown by HWCVD at low substrate temperature of 200 degrees C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B(2)H(6) doping ratio, crystalline volume fraction, optical band gap and dark conductivity. (C) 2008 Elsevier B.V. All rights reserved.

Item Type: Article
Subjects: T Technology > TP Chemical technology
T Technology > TD Environmental technology. Sanitary engineering
Divisions: Faculty of Information Science and Technology (FIST)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 23 Sep 2011 03:56
Last Modified: 23 Sep 2011 03:56
URI: http://shdl.mmu.edu.my/id/eprint/1943

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