Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes


Lewis, Harry I. J. and Jin, Xiao and Guo, Bingtian and Lee, Seunghyun and Jung, Hyemin and Kodati, Sri Harsha and Liang, Baolai and Krishna, Sanjay and Ong, Duu Sheng and Campbell, Joe C. and David, John P. R. (2023) Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Scientific Reports, 13 (1). ISSN 2045-2322

[img] Text
1.pdf - Published Version
Restricted to Repository staff only

Download (6MB)


Al0.85Ga0.15As0.56Sb0.44 has recently attracted significant research interest as a material for 1550 nm low-noise short-wave infrared (SWIR) avalanche photodiodes (APDs) due to the very wide ratio between its electron and hole ionization coefficients. This work reports new experimental excess noise data for thick Al0.85Ga0.15As0.56Sb0.44 PIN and NIP structures, measuring low noise at significantly higher multiplication values than previously reported (F = 2.2 at M = 38). These results disagree with the classical McIntyre excess noise theory, which overestimates the expected noise based on the ionization coefficients reported for this alloy. Even the addition of ‘dead space’ effects cannot account for these discrepancies. The only way to explain the low excess noise observed is to conclude that the spatial probability distributions for impact ionization of electrons and holes in this material follows a Weibull–Fréchet distribution function even at relatively low electric-fields. Knowledge of the ionization coefficients alone is no longer sufficient to predict the excess noise properties of this material system and consequently the electric-field dependent electron and hole ionization probability distributions are extracted for this alloy.

Item Type: Article
Uncontrolled Keywords: Optical sensors, Optoelectronic devices and components
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK8300-8360 Photoelectronic devices (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 28 Jul 2023 02:02
Last Modified: 28 Jul 2023 02:02


Downloads per month over past year

View ItemEdit (login required)