Citation

Thirugnanam, Sargunam and Lim, Way Soong and Prabhu, Chinnaraj Munirathina and Singh, Ajay Kumar (2023) Energy-Efficient and Variability-Resilient 11T SRAM Design Using Data-Aware Read–Write Assist (DARWA) Technique for Low-Power Applications. Sensors, 23 (11). p. 5095. ISSN 1424-8220

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Abstract

Assist (DARWA) technique. The E2VR11T cell comprises 11 transistors and operates with single-ended read and dynamic differential write circuits. The simulated results in a 45 nm CMOS technology exhibit 71.63% and 58.77% lower read energy than ST9T and LP10T and lower write energies of 28.25% and 51.79% against S8T and LP10T cells, respectively. The leakage power is reduced by 56.32% and 40.90% compared to ST9T and LP10T cells. The read static noise margin (RSNM) is improved by 1.94× and 0.18×, while the write noise margin (WNM) is improved by 19.57% and 8.70% against C6T and S8T cells. The variability investigation using the Monte Carlo simulation on 5000 samples highly validates the robustness and variability resilience of the proposed cell. The improved overall performance of the proposed E2VR11T cell makes it suitable for low-power applications.

Item Type:	Article
Uncontrolled Keywords:	static random-access memory (SRAM); energy efficient; variability resilient; process variations; static noise margin; write ability; Monte Carlo simulation; low power
Subjects:	Q Science > QC Physics > QC770-798 Nuclear and particle physics. Atomic energy. Radioactivity > QC793-793.5 Elementary particle physics
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	03 Jul 2023 03:41
Last Modified:	03 Jul 2023 03:41
URII:	http://shdl.mmu.edu.my/id/eprint/11485

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