Surface Photo Voltage Measurement Of Ultra-Violet Irradiation Effects In Oxidized Silicon Wafers

Kang, Ban Hong (2006) Surface Photo Voltage Measurement Of Ultra-Violet Irradiation Effects In Oxidized Silicon Wafers. Masters thesis, Multimedia University.

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Abstract

The effect of cumulative ultraviolet (UV, 4.9eV) irradiation on the p-type silicon wafers, with thermal oxide between 3.3-20.0 nm, was investigated by using the surface photo voltage (SPV) technique. All the experiments were carried out in the silicon processing plant, Shin-Etsu Handotai (M) Sdn Bhd, which was located in the free trade zone, Ulu Klang, Selangor.

Item Type: Thesis (Masters)
Subjects: Q Science > QC Physics
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 05 Aug 2010 03:42
Last Modified: 05 Aug 2010 03:42
URI: http://shdl.mmu.edu.my/id/eprint/1089

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