Study of Electrical Performance of Hetero-Dielectric Gate Tunnel Field Effect Transistor (HDG TFET): A Novel Structure for Future Nanotechnology


Tan, Chun Fui and Singh, Ajay Kumar and Lim, Way Soong (2022) Study of Electrical Performance of Hetero-Dielectric Gate Tunnel Field Effect Transistor (HDG TFET): A Novel Structure for Future Nanotechnology. Journal of Engineering Technology and Applied Physics, 4 (1). pp. 35-39. ISSN 2682-8383

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Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDD on the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall power consumption of the circuit and improving the battery life. The conventional Metal Oxide Field Effect Transistor (MOSFET) requires at least 60 mV of gate voltage for better current drive at room temperature which is difficult to achieve due to thermal limit. This limitation of gate voltage requirement degrades the performance of the device at lower VDD. Tunnel Field Effect Transistor (TFET) is a potential candidate to replace CMOS in deep-submicron region due to its lower subthreshold slope SS (< 60 mV/decade) at room temperature. Steep switching in TFET can extend the supply voltage scaling with improved energy efficiency for both digital and analog applications. Despite those advantages, TFETs are suffering from lower ON current and larger ambipolar current. To overcome these shortcomings, a new structure, known as Hetero-dielectric gate TFET (HDG TFET), has been proposed in the literature. Since, in the absence of the compact analytical model, it is difficult to understand the electrical behaviour of the HDG TFET device, therefore, the present paper presents an analytical model of transconductance parameter of HDG TFET device. The electrical performance analysis of HDG TFET device reflects that on current can be increased considerably by choosing gate material of higher work function near the source region which also suppresses the ambipolar current. It is also observed that a thinner silicon film and larger drain bias result in larger transconductance value.

Item Type: Article
Uncontrolled Keywords: TFET, dynamic power, leakage current, transconductance, heterodielectric, surface potential
Subjects: Q Science > QA Mathematics > QA71-90 Instruments and machines
Divisions: Faculty of Engineering and Technology (FET)
Faculty of Information Science and Technology (FIST)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 13 Apr 2023 02:29
Last Modified: 13 Apr 2023 02:44


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