Citation

Mohd Akhbar, Siti Amiera and Ong, Duu Sheng (2022) Analysis of Electron Transferred Effect in THz Gunn Diodes. Periodic Research Publication, Faculty of Engineering. (Unpublished)

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Abstract

The performances of GaAs Gunn diodes with notch-δ-doped structure have been analysed using Monte Carlo modelling. The presence of a δ-doped layer after the notch caused a significant increase in the harmonic current amplitude of the device, where the growth of high field domain can be attributed to a slow electron track due to the well-known Gunn effect and an additional fast electron track which appears over a short time window when the domain is reaching the anode. An optimised GaAs notch-δ-doped structure with 700 nm device length including 100 nm notch, doping density of 8 1016 cm-3 in the transit region and 5 nm δ-doped layer operates at fundamental frequency of 0.262 THz with a current harmonic amplitude of 29.4×107 A/m2. Its second and third harmonic signals are found substantial reaching into the THz range of 0.512 THz and 0.769 THz.

Item Type:	Other
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Assoc. Dr Chee Pun Ooi
Date Deposited:	29 Nov 2022 01:20
Last Modified:	29 Nov 2022 01:20
URII:	http://shdl.mmu.edu.my/id/eprint/10651

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