Analysis of Electron Transferred Effect in THz Gunn Diodes


Mohd Akhbar, Siti Amiera and Ong, Duu Sheng (2022) Analysis of Electron Transferred Effect in THz Gunn Diodes. Periodic Research Publication, Faculty of Engineering. (Unpublished)

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The performances of GaAs Gunn diodes with notch-δ-doped structure have been analysed using Monte Carlo modelling. The presence of a δ-doped layer after the notch caused a significant increase in the harmonic current amplitude of the device, where the growth of high field domain can be attributed to a slow electron track due to the well-known Gunn effect and an additional fast electron track which appears over a short time window when the domain is reaching the anode. An optimised GaAs notch-δ-doped structure with 700 nm device length including 100 nm notch, doping density of 8 1016 cm-3 in the transit region and 5 nm δ-doped layer operates at fundamental frequency of 0.262 THz with a current harmonic amplitude of 29.4×107 A/m2. Its second and third harmonic signals are found substantial reaching into the THz range of 0.512 THz and 0.769 THz.

Item Type: Other
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials
Divisions: Faculty of Engineering (FOE)
Depositing User: Assoc. Dr Chee Pun Ooi
Date Deposited: 29 Nov 2022 01:20
Last Modified: 29 Nov 2022 01:20


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