Items where Author is "Koh, Pin Wai"

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Number of items: 6.

Article

Chang, Yee Hui Robin and Yoon, Tiem Leong and Lim, Thong Leng and Koh, Pin Wai and Goh, Eong Sheng (2020) Effects of oxygen variation on the improved structural stability, electronic and optical properties of ZnTeO compounds. Journal of Physics: Condensed Matter, 32 (22). ISSN 0953-8984, 1361-648X

Koh, Pin Wai and Yoon, Tiem Leong and Lim, Thong Leng and Goh, Eong Sheng and Chang, Yee Hui Robin (2020) Generation of ground-state structures and electronic properties of ternary AlxTiyNiz clusters (x + y + z = 6) with a two-stage density functional theory global search approach. International Journal of Quantum Chemistry, 120 (2). pp. 1-12. ISSN 0020-7608

Koh, Pin Wai and Yoon, Tiem Leong and Lim, Thong Leng and Chang, Robin Yee Hui and Goh, Eong Sheng (2020) Generation of ground‐state structures and electronic properties of ternary Al x Ti y Ni z clusters ( x + y + z = 6) with a two‐stage density functional theory global search approach. International Journal of Quantum Chemistry, 120 (2). pp. 1-34. ISSN 0020-7608

Lim, Thong Leng and Chang, Robin Yee Hui and Yoon, Tiem Leong and Koh, Pin Wai (2019) The generation of ground‐state structures and electronic properties of ternary Alk Til Nim clusters (k  + l  + m  = 4) from a two‐stage density functional theory global searching approach. International Journal of Quantum Chemistry, 119 (10). e25884. ISSN 0020-7608

Lim, Thong Leng and Koh, Pin Wai and Yoon, Tiem Leong and Chang, Yee Hui Robin (2019) The generation of ground-state structures and electronic properties of ternary AlkTilNim clusters (k + l + m = 4) from a two-stage density functional theory global searching approach. International Journal of Quantum Chemistry, 119 (10). ISSN 0020-7608

Lim, Thong Leng and Chang, Yee Hui Robin and Yoon, Tiem Leong and Koh, Pin Wai and Tuh, Moi Hua (2019) Frequency dependent linear and nonlinear optical properties of compositionally tuned inorganic CsSnX (X = Br, I) composites. Journal of Alloys and Compounds, 779. pp. 497-504. ISSN 0925-8388

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