Items where Author is "David, John P. R."

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Number of items: 5.

Article

Lewis, Harry I. J. and Jin, Xiao and Guo, Bingtian and Lee, Seunghyun and Jung, Hyemin and Kodati, Sri Harsha and Liang, Baolai and Krishna, Sanjay and Ong, Duu Sheng and Campbell, Joe C. and David, John P. R. (2023) Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Scientific Reports, 13 (1). ISSN 2045-2322

Jin, Xiao and Xie, Shiyu and Liang, Baolai and Yi, Xin and Lewis, Harry and Lim, Leh W. and Liu, Yifan and Ng, Beng Koon and Huffaker, Diana L. and Tan, Chee Hing and Ong, Duu Sheng and David, John P. R. (2022) Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP. IEEE Journal of Selected Topics in Quantum Electronics, 28 (2). pp. 1-8. ISSN 1077-260X

Ong, Duu Sheng and Tan, Ai Hui and Choo, Kan Yeep and Yeoh, Keat Hoe and David, John P. R. (2022) Weibull-Fréchet random path length model for avalanche gain and noise in photodiodes. Journal of Physics D: Applied Physics, 55 (6). 065105. ISSN 0022-3727

Kim, F. Li and Duu, S. Ong and David, John P. R. and Tozer, Richard C. and Rees, Graham J. and Plimmer, Stephen A. and Keng, Y. Chang and Roberts, John S. (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE Transactions on Electron Devices, 47 (5). pp. 910-914. ISSN 0018-9383

Conference or Workshop Item

Jin, Xiao and Xie, Shiyu and Liang, Baolai L. and Yi, Xin and Lewis, Harry and Lim, Leh Woon and Liu, Yifan and Ng, Beng Koon and Huffaker, Diana L. and Tan, Chee Hing and Ong, Duu Sheng and David, John P. R. (2022) Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP. In: Optical Components and Materials XIX 2022, 20-24 Feb 2022, Online Conference.

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