# Mathematical Modeling And Characterization Of Hetero-Gate-Dielectric Tunnel-Field Effect Transistor (Hgtfet)

## Citation

Tan, Chun Fui and Lim, Way Soong and Singh, Ajay Kumar (2021) Mathematical Modeling And Characterization Of Hetero-Gate-Dielectric Tunnel-Field Effect Transistor (Hgtfet). In: 2nd FET PG Engineering Colloquium Proceedings 2021, 1-15 Dec. 2021, Online Conference. (Unpublished)

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## Abstract

Power reduction is a serious design concern for submicron logic circuits, which can be achieved by scaling the supply voltage. Modern Field Effect Transistor (FET) circuits require at least 60 mV of gate voltage for better current drive at room temperature. The tunnel Field Effect Transistor (TFET) is a leading future device due to its steep subthreshold swing (SS), which makes its ideal device at low power supply. Steep switching TFET can extend the supply voltage scaling with improved energy efficiency for both digital and analog applications. These devices suffer from large ambipolar current which cannot be reduced using Dual Metal Gate (DMG) alone. Gate dielectric materials play a key role in suppressing the ambipolar current. Analytical models are helpful to design, simulate and provide a further insight on the working electrical characteristics of the device. In this study, a complete analytical models for channel potential distribution, tunneling width and the threshold voltage of the hetero-gate dielectric (HDG) TFET have been derived using parabolic potential approximation method to solve the 2-D Poisson’s equation. The accuracy of the proposed model is validated by comparing the model results with the results available in the literature as well as 2-D ATLAS TCAD simulator results with a close agreement. It is observed that as the length of high-k region near the source reduces, conduction band becomes shallow which makes band-to-band tunneling difficult and increases the threshold voltage. In results, the device offers better gm, lower SS, lower leakage and larger drive currents due to weaker insulating barriers at the tunneling junction. Also, higher effective dielectric constant gives better gate coupling and lower trap density. As conclusion, the proposed structure suppresses the ambipolar current and enhance the drive current with reduced SCEs.

Item Type: Conference or Workshop Item (Paper) Dual metal gate, Dielectric material, TFET, Hetero-Dielectric gate, Ambipolar current, Tunnel current T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials Faculty of Engineering and Technology (FET) Ms Nurul Iqtiani Ahmad 26 Jan 2022 01:39 26 Jan 2022 01:39 http://shdl.mmu.edu.my/id/eprint/9889