Radio frequency magnetron sputter deposited ZnO films doped with Al, Ga and Ti


Chan, Kah Yoong and Au, Benedict Wen Cheun and Low, Cheng Yang and Ng, Zi Neng and Yeoh, Mian En and Pang, Wai Leong and Lee, Chu Liang and Wong, Sew Kin (2019) Radio frequency magnetron sputter deposited ZnO films doped with Al, Ga and Ti. Materials Research Innovations, 23 (1). pp. 22-26. ISSN 1432-8917

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Zinc oxide (ZnO) is a key material in the field of transparent large-area electronics. Some of the ZnO applications in large-area electronics include sensors, transistors and solar cells. In this work, ZnO films doped with aluminium (Al), gallium (Ga) and titanium (Ti) with different doping concentrations were deposited on glass substrates via the radio frequency (R.F.) plasma magnetron sputtering technique. The correlations of different doping concentration with the structural, optical and electrical properties were investigated by Atomic Force Microscopy, Ultraviolet–Visible Spectrometer and Hall Electronic Transport Measurement System, respectively.

Item Type: Article
Uncontrolled Keywords: Zinc oxide, R.F. magnetron sputtering, structural properties, optical properties, electrical properties
Subjects: T Technology > TP Chemical technology > TP934-945 Paints, pigments, varnishes, etc.
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 11 Feb 2022 02:47
Last Modified: 11 Feb 2022 02:47


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