Citation

Cheang, Pei Ling and Ooi, Wesley Tat Lung and Chan, Yee Kit and You, Ah Heng (2020) Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes. The European Physical Journal Applied Physics, 92 (1). pp. 1-7. ISSN 1286-0042

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Abstract

In this work, Monte Carlo model is developed to investigate the avalanche characteristics of GaN and Al0.45Ga0.55N avalanche photodiodes (APDs) using random ionization path lengths incorporating dead space effect. The simulation includes the impact ionization coefficients, multiplication gain and excess noise factor for electron- and hole-initiated multiplication with a range of thin multiplication widths. The impact ionization coefficient for GaN is higher than that of Al0.45Ga0.55N. For GaN, electron dominates the impact ionization at high electric field while hole dominate at low electric field whereas Al0.45Ga0.55N has hole dominate the impact ionization at higher field while electron dominate the lower field. In GaN APDs, electron-initiated multiplication is leading the multiplication gain at thinner multiplication widths while hole-initiated multiplication leads for longer widths. However for Al0.45Ga0.55N APDs, hole-initiated multiplication leads the multiplication gain for all multiplication widths simulated. The excess noise of electron-initiated multiplication in GaN APDs increases as multiplication widths increases while the excess noise decreases as the multiplication widths increases for hole-initiated multiplication. As for Al0.45Ga0.55N APDs, the excess noise for hole-initiated multiplication increases when multiplication width increases while the electron-initiated multiplication increases with the same gradient at all multiplication widths.

Item Type:	Article
Uncontrolled Keywords:	Ionization
Subjects:	Q Science > QC Physics > QC501-766 Electricity and magnetism > QC501-(721) Electricity > QC701-715.4 Electric discharge
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	21 Oct 2021 03:26
Last Modified:	21 Oct 2021 03:26
URII:	http://shdl.mmu.edu.my/id/eprint/8309

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