Citation

Singh, Ajay Kumar (2018) An analytical analysis of quantum capacitance in nano-scale single-wall carbon nano tube field effect transistor (CNTFET). International Journal of Nanoelectronics and Materials, 11 (3). pp. 249-262. ISSN 1985-5761

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Abstract

This paper discusses the quantum capacitance effect in single-wall conventional CNTFET devices. The analytical expression for quantum capacitance has been derived based on the normalized number of carriers/total charge density. The total charge density in the inverted channel is suppressed at large drain voltage but remains unaffected by introducing any new sub-band. Lowering the quantum capacitance in the CNTFET device is a major challenge to improve the performance of the device. Quantum capacitance takes lower value at higher subband when operated at low gate bias voltage. Lower quantum capacitance can be achieved for larger tube’s diameter due to reduced band gap and by controlling the BTBT (band-to-band tunneling) leakage current which is possible by choosing the proper dielectric material and gate oxide thickness.

Item Type:	Article
Uncontrolled Keywords:	Carbon nanotubes, Density of States, Gate Capacitance, Quantum Capacitance, Total Charge Density
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) > TA401-492 Materials of engineering and construction. Mechanics of materials
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	30 Nov 2020 08:47
Last Modified:	30 Nov 2020 08:47
URII:	http://shdl.mmu.edu.my/id/eprint/7520

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