Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region

M. M. Shahidul Hassan, (1999) Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region. International Journal of Electronics, 86 (1). pp. 1-14. ISSN ISSN 0020-7217 (Print), 1362-3060 (Online)

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Official URL: http://www.tandfonline.com/doi/abs/10.1080/0020721...

Abstract

A physical model taking into consideration the effects of finite collector minority carrier lifetime and minority carrier blocking property of the low-high (n−n+) junction is proposed for predicting the bipolar transistor dc characteristics covering saturation and quasi-saturation operations. Solution for the electron and hole carrier profiles, recombination, drift and diffusion current densities, electric field distributions and voltage drops as a function of the collector current density is presented. The low-level injection model neglecting collector minority carrier recombination current within the injection region is also present. The validity of the complete model is verified by comparing the results obtained by the present analysis with experimental results available in the literature.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 25 Oct 2013 08:22
Last Modified: 25 Oct 2013 09:05
URI: http://shdl.mmu.edu.my/id/eprint/4316

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