Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC


Sun, C. C. and You, A. H. and Wong, E. K. and Yahya, A. K. and Alam, Shah (2010) Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC. In: Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC, 7–9 December 2009, Malacca (Malaysia) .

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The Monte Carlo (MC) simulation of electron transport properties at high electric field region in 4H‐ and 6H‐SiC are presented. This MC model includes two non‐parabolic conduction bands. Based on the material parameters, the electron scattering rates included polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron drift velocity, energy and free flight time are simulated as a function of applied electric field at an impurity concentration of 1×1018 cm3 in room temperature. The simulated drift velocity with electric field dependencies is in a good agreement with experimental results found in literature. The saturation velocities for both polytypes are close, but the scattering rates are much more pronounced for 6H‐SiC. Our simulation model clearly shows complete electron transport properties in 4H‐ and 6H‐SiC.

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 04 Sep 2013 07:06
Last Modified: 04 Sep 2013 07:06


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