Analysis of notch-δ-doped GaAs-based Gunn diodes


Mohd Akhbar, Siti Amiera and Ong, Duu Sheng (2022) Analysis of notch-δ-doped GaAs-based Gunn diodes. Journal of Physics D: Applied Physics, 55 (37). p. 375103. ISSN 0022-3727

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The performances of GaAs-based Gunn diodes with notch-δ-doped structures are studied in this work. The δ-doped effect is analysed using Monte Carlo modelling in terms of temporal evolution of current density, electric field profile, electron energy, mean velocity and occupancy in the Γ and higher valleys. The presence of a δ-doped layer after the notch causes a significant increase in the harmonic current amplitude of the device, where the growth of the high field domain can be attributed to a slow electron track due to the well-known Gunn effect and an additional fast electron track which appears over a short time window when the domain is reaching the anode. An optimised GaAs notch-δ-doped structure with a 700 nm device length including a 100 nm notch and a 5 nm δ-doped layer can generate signals at a fundamental frequency of 262 GHz with a current harmonic amplitude of 29.4 × 107 A m−2, which is almost twice of that without a δ-doped layer. Its second and third harmonic signals are found to be substantial, reaching into the terahertz range of 512 GHz and 769 GHz.

Item Type: Article
Uncontrolled Keywords: Gunn diode, delta-doped, Monte Carlo model, gallium arsenide, terahertz source
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 03 Aug 2022 00:38
Last Modified: 03 Aug 2022 00:39


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